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UJ4SC075005L8S

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UJ4SC075005L8S

SICFET N-CH 750V 120A TOLL

Manufacturer: Qorvo

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Qorvo SiCFET N-Channel TOLL package, part number UJ4SC075005L8S. This device features a 750 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tc). The Rds On is specified at a maximum of 7.2 mOhm at 80 A and 12 V gate drive. Key parameters include a gate charge (Qg) of 164 nC at 15 V and input capacitance (Ciss) of 8374 pF at 400 V. The component supports a gate-source voltage range of ±20 V and has a threshold voltage of 6 V at 10 mA. With a maximum power dissipation of 1153 W (Tc), this surface mount device operates across a temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging. This SiCFET technology is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Cascode SiCJFET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 80A, 12V
FET Feature-
Power Dissipation (Max)1153W (Tc)
Vgs(th) (Max) @ Id6V @ 10mA
Supplier Device PackageTOLL
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds8374 pF @ 400 V

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