UJ4C075060K3S
SICFET N-CH 750V 28A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Qorvo UJ4C075060K3S is an N-Channel SiCFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 750 V and a continuous drain current (Id) of 28A at 25°C, with a maximum power dissipation of 155W. The device exhibits a low on-resistance of 74mOhm at 20A and 12V. Key parameters include a Gate Charge (Qg) of 37.8 nC at 15V and an input capacitance (Ciss) of 1422 pF at 100V. The UJ4C075060K3S is housed in a TO-247-3 package with a through-hole mounting type and operates across a temperature range of -55°C to 175°C. This technology is prevalent in power conversion, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1422 pF @ 100 V |
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