UJ4C075044L8SSR
750V/44MO,SICFET,G4,TOLLManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UJ4C075044L8SSR is a P-Channel Silicon Carbide FET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 750V and a continuous drain current (Id) rating of 35.6A (Tj) at 25°C. With a maximum on-resistance (Rds On) of 56mOhm at 25A and 12V gate drive, it offers efficient power handling with a maximum power dissipation of 181W (Tc). The device operates within an extended temperature range of -55°C to 175°C (TJ) and utilizes TOLL packaging for surface mounting. Key parameters include a gate charge (Qg) of 37.8 nC at 15V and input capacitance (Ciss) of 1400 pF at 400V. This SiCFET is suitable for industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.6A (Tj) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 181W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| Qualification | - |
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