UJ4C075033L8S
750V/33MO,SICFET,G4,TOLLManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UJ4C075033L8S, a P-Channel SiCFET, offers a 750V breakdown voltage and a 41mOhm maximum Rds(on) at 230A and 12V gate drive. This TOLL package device supports a continuous drain current of 44A at 25°C and a maximum power dissipation of 205W. Key specifications include a gate charge of 37.8 nC at 15V and input capacitance of 1400 pF at 400V. The operating temperature range is -55°C to 175°C. This component finds application in high-voltage power conversion systems across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 230A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| Qualification | - |
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