UJ4C075033K3S
750V/33MOHM, SIC, CASCODE, G4, TManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ4C075033K3S is a 750V N-Channel SiCFET cascode device with a low on-resistance of 41mOhm at 30A and 12V Vgs. This through-hole component, packaged in a TO-247-3, offers a continuous drain current of 47A (Tc) and a maximum power dissipation of 242W (Tc). Featuring a 1400pF input capacitance and 37.8nC gate charge, it is designed for high-efficiency power conversion applications. Typical operating temperature range is -55°C to 175°C (TJ). This device is suitable for use in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 242W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
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