UJ4C075033B7S
750V/33MOHM, N-OFF SIC CASCODE,Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ4C075033B7S is an N-Channel SiCFET device featuring a 750V drain-to-source voltage and a low on-resistance of 41mOhm at 30A and 12V Vgs. This cascode configuration offers high power density with a continuous drain current rating of 44A (Tc) and a maximum power dissipation of 197W (Tc). The UJ4C075033B7S is supplied in a D2PAK-7 surface mount package, suitable for demanding applications in power conversion, motor drive, and industrial power systems. Key parameters include a gate charge (Qg) of 37.8 nC and input capacitance (Ciss) of 1400 pF. It operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 197W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
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