UJ4C075023L8S
750V/23MO,SICFET,G4,TOLLManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UJ4C075023L8S, a N-Channel Silicon Carbide FET (SiCFET), offers a 750V drain-source breakdown voltage with a continuous drain current of 64A (Tc) at 25°C. This device features a low on-resistance of 29mOhm (Max) at 40A, 12V and a maximum power dissipation of 278W (Tc). With a gate charge (Qg) of 37.8 nC (Max) at 15V and input capacitance (Ciss) of 1400 pF (Max) at 400V, it is designed for efficient switching. The UJ4C075023L8S is packaged in a TOLL (8-PowerSFN) format for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). This component is utilized in demanding applications such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TOLL |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
| Qualification | - |
Request a Quote
Clients Also Buy
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UF3C065040B3
MOSFET N-CH 650V 41A TO263
UJ4SC075011B7S
750V/11MOHM, N-OFF SIC STACK CAS
