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UJ4C075023K3S

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UJ4C075023K3S

750V/23MOHM, SIC, CASCODE, G4, T

Manufacturer: Qorvo

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Qorvo UJ4C075023K3S is a 750V N-Channel SiCFET (Cascode SiCJFET) with a continuous drain current capability of 66A at 25°C (Tc) and a maximum power dissipation of 306W (Tc). This through-hole component is housed in a TO-247-3 package and features a low on-resistance of 29mOhm at 40A and 12V gate-source voltage. Key parameters include a Vgs(th) of 6V at 10mA, Vgs(max) of ±20V, and a gate charge (Qg) of 37.8 nC at 15V. Input capacitance (Ciss) is rated at a maximum of 1400 pF at 400V. The UJ4C075023K3S is suitable for high-voltage power conversion applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems. It operates within a temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C
TechnologySiCFET (Cascode SiCJFET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Rds On (Max) @ Id, Vgs29mOhm @ 40A, 12V
FET Feature-
Power Dissipation (Max)306W (Tc)
Vgs(th) (Max) @ Id6V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)750 V
Gate Charge (Qg) (Max) @ Vgs37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 400 V

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