UJ4C075018K3S
SICFET N-CH 750V 81A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UJ4C075018K3S is a high-performance N-Channel SiCFET designed for demanding power applications. This device features a drain-source voltage (Vdss) of 750 V and a continuous drain current (Id) of 81 A at 25°C (Tc), with a maximum power dissipation of 385 W (Tc). The on-resistance (Rds On) is specified at a maximum of 23 mOhm at 20 A and 12 V. Key parameters include a gate charge (Qg) of 37.8 nC (Max) at 15 V and input capacitance (Ciss) of 1422 pF (Max) at 100 V. The UJ4C075018K3S operates within a junction temperature range of -55°C to 175°C and is housed in a TO-247-3 package for through-hole mounting. This component is suitable for use in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 385W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 750 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1422 pF @ 100 V |
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