UJ3C120150K3S
SICFET N-CH 1200V 18.4A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UJ3C120150K3S is an N-Channel SiCFET designed for high-voltage, high-efficiency applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 18.4 A at 25°C. The device offers a low on-resistance (Rds On) of 180 mOhm maximum at 5 A and 12 V gate drive. Key parameters include a maximum power dissipation of 166.7 W (Tc), a gate charge (Qg) of 30 nC at 15 V, and an input capacitance (Ciss) of 738 pF at 100 V. Operating across a temperature range of -55°C to 175°C (TJ), the UJ3C120150K3S is housed in a TO-247-3 package with through-hole mounting. This SiCFET technology is suitable for demanding power conversion systems in industries such as industrial power supplies, electric vehicle charging, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 166.7W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 738 pF @ 100 V |
Request a Quote
Clients Also Buy
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UJ4C075023L8S
750V/23MO,SICFET,G4,TOLL
UF3C065040B3
MOSFET N-CH 650V 41A TO263
