UJ3C120070K4S
1200V/70MOHM, N-OFF SIC CASCODE,Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ3C120070K4S is a 1200V, 70mOhm N-Channel Silicon Carbide (SiC) FET in a TO-247-4 package. This cascode configuration offers a low on-resistance of 90mOhm at 20A and 12V Vgs, with a continuous drain current capability of 34.5A at 25°C (Tc). The device features a drain-source voltage of 1200V and a maximum power dissipation of 254.2W (Tc). Key parameters include an input capacitance (Ciss) of 1500pF at 100V and a gate charge (Qg) of 46nC at 15V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-voltage power conversion applications across various industries, including electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 254.2W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
| Qualification | - |
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