UJ3C065080K3S
MOSFET N-CH 650V 31A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ3C065080K3S is a 650 V N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a continuous drain current of 31 A (Tc) and a maximum power dissipation of 190 W (Tc). The low on-resistance of 111 mOhm at 20 A and 12 V (Vgs) minimizes conduction losses, while the gate charge of 51 nC (at 15 V) facilitates fast switching performance. With a maximum junction temperature of 175°C and a TO-247-3 through-hole package, the UJ3C065080K3S is suitable for demanding applications across various industries, including electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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