UJ3C065080B3
MOSFET N-CH 650V 25A TO263Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ3C065080B3 is a 650V N-Channel MOSFET designed for high-performance power applications. This component features a continuous drain current of 25A (Tc) and a maximum power dissipation of 115W (Tc). The UJ3C065080B3 boasts a low on-resistance of 111mOhm at 20A and 12V, with a gate charge of 51 nC at 15V and input capacitance of 1500 pF at 100V. Optimized for surface mounting, it is supplied in a TO-263 (D2PAK) package and is available on tape and reel. This MOSFET is suitable for use in demanding sectors such as industrial power supplies and electric vehicle charging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 111mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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