UJ3C065030B3
MOSFET N-CH 650V 65A TO263Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UJ3C065030B3 is a 650 V N-Channel MOSFET designed for high-power switching applications. This component features a continuous drain current capability of 65A (Tc) and a maximum power dissipation of 242W (Tc). The Rds(On) is specified at a maximum of 35mOhm at 50A and 12V gate drive. Key parameters include a gate charge (Qg) of 51 nC at 15V and input capacitance (Ciss) of 1500 pF at 100V. The device is housed in a TO-263-3, D2PAK surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in industries such as industrial power supplies, electric vehicle charging, and solar inverters. The UJ3C065030B3 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 242W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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