UF4SC120030K4S
1200V/30MOHM SIC STACKED FAST CAManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UF4SC120030K4S is a 1200V N-Channel SiCFET designed for high-performance power applications. This through-hole component, packaged in a TO-247-4, offers a continuous drain current of 53A (Tc) and a maximum power dissipation of 341W (Tc). Featuring a low on-resistance of 39mOhm @ 20A, 12V and a drain-source voltage of 1200V, it is suitable for demanding power conversion and management tasks. The device operates across a temperature range of -55°C to 175°C (TJ) and has a gate threshold voltage of 6V @ 10mA. Its SiCFET technology provides excellent switching speed and efficiency. This component is commonly utilized in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 15 V |
Request a Quote
Clients Also Buy
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UJ4C075018K3S
SICFET N-CH 750V 81A TO247-3
UF3C120080K4S
SICFET N-CH 1200V 33A TO247-4
