UF4SC120030B7S
1200V/30MO,SICFET,G4,TO263-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UF4SC120030B7S is a P-Channel SiCFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 56A at 25°C (Tj). The Rds On is specified at a maximum of 39mOhm at 20A and 12V gate drive. With a maximum power dissipation of 341W (Tc) and a surface mount D2PAK-7L package, it is suitable for demanding power conversion systems. Key specifications include a gate charge (Qg) of 37.8 nC at 15V and input capacitance (Ciss) of 1450 pF at 800V. The operating temperature range is -55°C to 175°C (TJ). This device is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tj) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 341W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7L |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 800 V |
| Qualification | - |
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