UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CAManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo's UF4SC120023K4S is a 1200V N-Channel SiCFET designed for high-power applications. This component features a low on-resistance of 29mOhm at 40A and 12V, with a continuous drain current capability of 53A (Tc) at 25°C. The device offers a maximum power dissipation of 385W (Tc) and a drain-to-source voltage (Vdss) of 1200V. Key parameters include a gate threshold voltage (Vgs(th)) of 6V at 10mA and a maximum gate-source voltage of ±20V. The input capacitance (Ciss) is 1430pF at 800V, and the gate charge (Qg) is 37.8nC at 15V. Operating across a wide temperature range of -55°C to 175°C (TJ), this through-hole TO-247-4 package component is suitable for power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 385W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 800 V |
Request a Quote
Clients Also Buy
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UJ4C075023L8S
750V/23MO,SICFET,G4,TOLL
UF3C065040B3
MOSFET N-CH 650V 41A TO263
