UF4SC120023B7S
1200V/23MO,SICFET,G4,TO263-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UF4SC120023B7S, a 1200V N-Channel Silicon Carbide (SiC) FET, offers a low on-resistance of 30mOhm at 40A/12V. This depletion mode device features a continuous drain current capability of 72A at 25°C and a maximum power dissipation of 385W. With an input capacitance of 1430pF at 800V and a gate charge of 37.8nC at 15V, it is designed for high-frequency switching applications. The UF4SC120023B7S is housed in a TO-263-8, D2PAK-7L surface mount package, operating from -55°C to 175°C. This component is utilized in demanding power electronics applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 12V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 385W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7L |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 800 V |
| Qualification | - |
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