UF4C120070K4S
1200V/70MOHM, SIC, FAST CASCODE,Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF4C120070K4S is a 1200V N-Channel Silicon Carbide (SiC) Fast Cascode FET, designed for high-performance power applications. This device features a low on-resistance of 91mOhm maximum at 20A and 12V Vgs, coupled with a continuous drain current capability of 27.5A at 25°C (Tc). With a drain-to-source voltage (Vdss) of 1200V and a maximum power dissipation of 217W (Tc), it is suitable for demanding environments. The UF4C120070K4S boasts a gate charge (Qg) of 37.8 nC maximum at 15V and an input capacitance (Ciss) of 1370 pF maximum at 800V. This component utilizes SiCFET Cascode technology and is housed in a TO-247-4 package suitable for through-hole mounting. It operates within a temperature range of -55°C to 175°C (TJ). This device finds application in industries such as electric vehicle charging, industrial motor drives, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 217W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 800 V |
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