UF4C120070B7SSB
1200V/70MO,SICFET,G4,TO263-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 1200 V 25.7A (Tj) 183W (Tc) Surface Mount D2PAK-7
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.7A (Tj) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 800 V |
| Qualification | - |
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