UF4C120070B7S
1200V/70MO,SICFET,G4,TO263-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF4C120070B7S is a P-Channel Silicon Carbide Field Effect Transistor designed for high-voltage, high-performance applications. This component offers a 1200V drain-source voltage and a continuous drain current of 25.7A at 25°C. Featuring a low on-resistance of 91mOhm maximum at 20A and 12V gate-source voltage, it is optimized for efficient operation. The UF4C120070B7S has a maximum power dissipation of 183W at its case temperature and a junction-to-ambient operating temperature range of -55°C to 175°C. The device is housed in a TO-263-7L (D2PAK-7L) surface mount package, facilitating integration into advanced power management designs. Key parameters include a gate charge of 37.8 nC maximum at 15V and input capacitance of 1370 pF maximum at 800V. This SiCFET is suitable for demanding applications in sectors such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.7A (Tj) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 183W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7L |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 800 V |
| Qualification | - |
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