UF4C120053K3S
1200V/53MOHM, SIC, FAST CASCODE,Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF4C120053K3S is a 1200V N-channel Silicon Carbide (SiC) FET featuring a fast cascode configuration. This device offers a low on-resistance of 67mOhm at 20A and 12V Vgs, with a continuous drain current capability of 34A (Tc). With a maximum power dissipation of 263W (Tc), it is designed for demanding applications. The UF4C120053K3S utilizes SiCFET technology and comes in a TO-247-3 through-hole package. It is suitable for high-voltage power conversion systems across industries such as electric vehicles, industrial power supplies, and renewable energy. The device operates within a temperature range of -55°C to 175°C (TJ) and has a gate-source voltage limit of ±20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 263W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 800 V |
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