UF3SC120040B7S
1200V/40MOHM, SIC, STACKED FASTManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo's UF3SC120040B7S is a 1200V N-Channel SiCFET offering a low on-resistance of 40mOhm at 35A and 12V. This device features a continuous drain current capability of 47A (Tc) and a maximum power dissipation of 214W (Tc). With a gate charge of 43nC @ 12V and input capacitance of 1500pF @ 100V, it is designed for efficient switching. The UF3SC120040B7S is packaged in a D2PAK-7 (TO-263-8) surface mount configuration, suitable for demanding applications in electric vehicle charging, industrial power supplies, and solar inverters. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 35A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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