UF3SC120016K4S
SICFET N-CH 1200V 107A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3SC120016K4S is a 1200V N-Channel SiCFET with a continuous drain current capability of 107A at 25°C. This through-hole component, housed in a TO-247-4 package, features a low on-resistance of 21mOhm at 50A and 12V Vgs. The device offers a maximum power dissipation of 517W and a gate charge of 218 nC at 15V. Its high breakdown voltage and efficient switching characteristics make it suitable for demanding applications in electric vehicles, industrial power supplies, and renewable energy systems. The operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7824 pF @ 800 V |
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