UF3SC120016K3S
SICFET N-CH 1200V 107A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3SC120016K3S is a 1200V N-Channel SiCFET designed for high-performance power applications. This component features a continuous drain current of 107A at 25°C and a maximum power dissipation of 517W at 100°C case temperature. The Rds(On) is specified at 21mOhm maximum at 50A and 12V gate-source voltage. Key parameters include a gate charge of 218 nC maximum at 15V and input capacitance of 7824 pF maximum at 800V. The device operates within an extended temperature range of -55°C to 175°C (TJ) and is housed in a TO-247-3 package for through-hole mounting. This SiCFET technology is suitable for demanding sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 107A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 517W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 218 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7824 pF @ 800 V |
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