UF3SC120009K4S
SICFET N-CH 1200V 120A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UF3SC120009K4S, an N-Channel SiCFET, offers a 1200V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This device features a low on-resistance of 11mOhm maximum at 100A and 12V gate drive, with a maximum power dissipation of 789W (Tc). Static characteristics include a gate charge (Qg) of 234 nC at 15V and input capacitance (Ciss) of 8512 pF at 100V. The UF3SC120009K4S is packaged in a TO-247-4 through-hole configuration, suitable for demanding applications across industrial power supplies, electric vehicle charging infrastructure, and motor drive systems. It operates across an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 789W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8512 pF @ 100 V |
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