UF3SC065040D8S
SICFET N-CH 650V 18A 4DFNManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Qorvo UF3SC065040D8S is an N-Channel SiCFET designed for high-performance power applications. This device features a 650 V drain-to-source voltage and a continuous drain current of 18 A at 25°C (Tc), with a maximum power dissipation of 125 W (Tc). The UF3SC065040D8S offers a low on-resistance of 58 mOhm at 20 A and 12 V gate drive. Key parameters include a gate charge of 43 nC at 12 V and input capacitance of 1500 pF at 100 V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±25V. It is supplied in a 4-DFN (8x8) package, suitable for surface mounting and delivered on tape and reel. This component finds application in industries such as industrial power supplies, electric vehicle charging, and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
Request a Quote
Clients Also Buy
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3
UF4SC120023K4S
1200V/23MOHM SIC STACKED FAST CA
