UF3SC065040B7S
650V/40MOHM, SIC, STACKED FAST CManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3SC065040B7S is a 650V N-Channel SiCFET designed for high-performance applications. This device features a low Rds(on) of 52mOhm at 30A and 12V Vgs, with continuous drain current capability of 43A (Tc) and power dissipation of 195W (Tc). The UF3SC065040B7S utilizes a cascode SiCJFET technology, offering efficient switching characteristics. Key parameters include a 650V drain-source voltage, 43 nC gate charge at 12V, and 1500 pF input capacitance at 100V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is packaged in a TO-263-8, D2PAK (7 leads + tab) format, supplied in tape and reel. This component is suitable for power supply, motor drive, and industrial power conversion applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 195W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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