UF3SC065030D8S
SICFET N-CH 650V 18A 4DFNManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3SC065030D8S is a 650V SiCFET N-Channel power MOSFET designed for high-efficiency applications. This component features a continuous drain current of 18A (Tc) and a maximum power dissipation of 179W (Tc). The UF3SC065030D8S offers a low on-resistance of 42mOhm @ 20A, 12V, with a gate charge of 43 nC @ 12 V. Its input capacitance (Ciss) is 1500 pF @ 100 V. The device is housed in a 4-DFN (8x8) surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage of ±25V. This SiCFET is suitable for use in demanding applications such as power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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