UF3SC065030B7S
650V/30MOHM, SIC, STACKED FAST CManufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF3SC065030B7S is an N-Channel SiCFET (Cascode SiCJFET) designed for high-performance applications. This surface mount device offers a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 62A at 25°C (Tc). With a maximum on-resistance (Rds On) of 35mOhm at 40A and 12V, it provides efficient power switching. The UF3SC065030B7S features a gate charge (Qg) of 43 nC at 12V and an input capacitance (Ciss) of 1500 pF at 100V. Its operating temperature range extends to 175°C (TJ), and it has a maximum power dissipation of 214W (Tc). The component is housed in a D2PAK-7 package (TO-263-8, D2PAK (7 Leads + Tab), TO-263CA) and supplied on a tape and reel. This device is suitable for use in power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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