UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3SC065007K4S is a 650V N-Channel SiCFET, packaged in a TO-247-4 through-hole configuration. This device offers a continuous drain current of 120A at 25°C, with a maximum power dissipation of 789W at the same temperature. The Rds On is specified at a low 9mOhm at 50A and 12V gate drive. Key parameters include a gate charge of 214nC at 15V and input capacitance of 8360pF at 100V. The operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in high-power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 789W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 214 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8360 pF @ 100 V |
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