UF3C170400K3S
SICFET N-CH 1700V 7.6A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo's UF3C170400K3S is an N-Channel SiCFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1700 V and a continuous Current Drain (Id) of 7.6A at 25°C (Tc). The device offers a low On-Resistance (Rds On) of 515mOhm at 5A and 12V gate drive, with a maximum power dissipation of 100W (Tc). Key characteristics include a Gate Charge (Qg) of 27.5 nC at 15V and an input capacitance (Ciss) of 740 pF at 100V. The UF3C170400K3S is housed in a TO-247-3 package suitable for through-hole mounting and operates within a temperature range of -55°C to 175°C (TJ). This SiCFET technology is suitable for use in power conversion systems, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 515mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 100 V |
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