UF3C170400B7S
SICFET N-CH 1700V 7.6A D2PAK-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C170400B7S is an N-Channel SiCFET with a drain-source voltage (Vdss) of 1700V. This device offers a continuous drain current (Id) of 7.6A at 25°C (Tc) and a maximum power dissipation of 100W (Tc). The Rds On is specified at a maximum of 515mOhm at 5A and 12V gate-source voltage. Key parameters include a gate charge (Qg) of 23.1 nC at 15V and input capacitance (Ciss) of 734 pF at 1200V. The device operates over a temperature range of -55°C to 175°C (TJ). It is housed in a D2PAK-7 surface mount package (TO-263-8, TO-263CA). This component is suitable for applications in power conversion, motor drives, and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 515mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 23.1 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 734 pF @ 1200 V |
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