UF3C120400K3S
SICFET N-CH 1200V 7.6A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo SiCFET N-Channel UF3C120400K3S is a 1200V device with a continuous drain current of 7.6A (Tc) and a maximum power dissipation of 100W (Tc). This through-hole component, housed in a TO-247-3 package, features a low Rds On of 515mOhm @ 5A, 12V. Key parameters include a gate charge (Qg) of 27 nC @ 15 V and input capacitance (Ciss) of 740 pF @ 100 V. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±25V. This SiCFET technology is suitable for applications in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 515mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 100 V |
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