UF3C120400B7S
SICFET N-CH 1200V 7.6A D2PAK-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo's UF3C120400B7S is an N-Channel SiCFET designed for high-voltage applications. This component features a 1200 V drain-source voltage and a continuous drain current of 7.6 A at 25°C (Tc), with a maximum power dissipation of 100 W (Tc). The device exhibits a maximum on-resistance of 515 mOhm at 5 A and 12 V gate drive. Key parameters include a gate charge of 22.5 nC at 15 V and input capacitance of 739 pF at 800 V. The UF3C120400B7S is housed in a D2PAK-7 surface mount package, suitable for demanding thermal environments. Its operating junction temperature range is -55°C to 175°C. This SiCFET is utilized in power conversion systems, particularly in electric vehicle charging, industrial power supplies, and renewable energy applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 515mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 739 pF @ 800 V |
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