UF3C120150K4S
SICFET N-CH 1200V 18.4A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C120150K4S is a 1200 V N-Channel SiCFET designed for high-power applications. This component features a continuous drain current rating of 18.4 A at 25°C (Tc) and a maximum power dissipation of 166.7 W (Tc). The Rds On is specified at 180 mOhm maximum at 5 A and 12 V gate drive. Key parameters include a gate charge of 25.7 nC at 12 V and input capacitance of 738 pF at 100 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is packaged in a TO-247-4 through-hole configuration. This SiCFET is suitable for use in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 166.7W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.7 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 738 pF @ 100 V |
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