UF3C120150K3S
SICFET N-CH 1200V 18.4A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C120150K3S is a high-performance N-Channel SiCFET designed for demanding power applications. This device features a drain-source voltage (Vdss) rating of 1200 V and offers a continuous drain current (Id) of 18.4 A at 25°C (Tc). The SiCFET technology enables superior switching characteristics and reduced conduction losses compared to traditional silicon MOSFETs. Packaged in a standard TO-247-3 through-hole configuration, it is suitable for robust thermal management. Its capabilities make it ideal for use in electric vehicle charging, industrial power supplies, and renewable energy systems where efficiency and reliability at high voltages are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18.4A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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