UF3C120150B7S
1200V/150MOHM, SIC, FAST CASCODEManufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo UF3C120150B7S is a 1200V N-Channel SiC Cascode FET designed for high-performance applications. This component features a low on-resistance of 180mOhm at 5A and 12V gate drive. With a continuous drain current of 17A (Tc) and a maximum power dissipation of 136W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 25.7 nC at 12V and input capacitance (Ciss) of 738 pF at 100V. The UF3C120150B7S is housed in a D2PAK-7 surface mount package, facilitating efficient thermal management and automated assembly. Operating temperature ranges from -55°C to 175°C (TJ). This device finds application in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 5A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25.7 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 738 pF @ 100 V |
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