UF3C120080K3S
SICFET N-CH 1200V 33A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF3C120080K3S is a high-performance N-Channel SiCFET designed for demanding power applications. This component features a 1200V drain-source voltage (Vdss) and a continuous drain current (Id) of 33A at 25°C, with a maximum power dissipation of 254.2W. It offers a low on-resistance (Rds On) of 100mOhm at 20A and 12V, facilitated by its SiCFET technology. The device has a gate charge (Qg) of 51 nC at 15V and an input capacitance (Ciss) of 1500 pF at 100V. Operating across a wide temperature range of -55°C to 175°C, it is packaged in a TO-247-3 through-hole configuration. This SiC component is suitable for use in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 254.2W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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