UF3C120080B7S
SICFET N-CH 1200V 28.8A D2PAK-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C120080B7S is a SiCFET N-Channel device featuring a 1200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 28.8A at 25°C (Tc). This component boasts a low on-resistance (Rds On) of 105mOhm at 20A and 12V, with a maximum power dissipation of 190W (Tc). The gate charge (Qg) is specified at 23 nC maximum at 12V, and input capacitance (Ciss) is 754 pF maximum at 100V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±25V. The threshold voltage (Vgs(th)) is 6V at 10mA. This SiCFET is housed in a D2PAK-7 (TO-263-8) surface mount package and is supplied on tape and reel. Applications for this component include high-voltage power conversion in industries such as electric vehicles and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V |
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