UF3C120040K4S
SICFET N-CH 1200V 65A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Qorvo SiCFET N-Channel MOSFET, part number UF3C120040K4S, offers 1200V drain-to-source voltage and 65A continuous drain current at 25°C. This through-hole TO-247-4 packaged device features a maximum on-resistance of 45mOhm at 40A and 12V gate-source voltage. Key parameters include a gate charge of 43 nC at 12V and input capacitance of 1500 pF at 100V. With a maximum power dissipation of 429W (Tc) and an operating temperature range of -55°C to 175°C, this device is suitable for demanding applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
Request a Quote
Clients Also Buy
UF3C120080K4S
SICFET N-CH 1200V 33A TO247-4
UJ4C075023L8S
750V/23MO,SICFET,G4,TOLL
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
