UF3C120040K3S
SICFET N-CH 1200V 65A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo's UF3C120040K3S is an N-Channel SiCFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 65A at 25°C, with a maximum power dissipation of 429W. The device has a low on-resistance (Rds On) of 45mOhm at 40A and 12V. Key parameters include a gate charge (Qg) of 51 nC and input capacitance (Ciss) of 1500 pF. The UF3C120040K3S is housed in a TO-247-3 package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C. This SiCFET is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 429W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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