UF3C065080K4S
MOSFET N-CH 650V 31A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C065080K4S is a 650V N-Channel MOSFET with a continuous drain current capability of 31A (Tc) and a maximum power dissipation of 190W (Tc). This component features a low on-resistance of 100mOhm at 20A and 12V. The UF3C065080K4S is packaged in a TO-247-4 through-hole configuration, suitable for demanding applications. Key parameters include a gate charge of 43 nC @ 12 V and input capacitance of 1500 pF @ 100 V. Its operating temperature range is -55°C to 175°C (TJ). This device is utilized in power factor correction, server power supplies, and EV charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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