UF3C065080K3S
MOSFET N-CH 650V 31A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C065080K3S is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 31 A at 25°C. The Rds On is specified at a maximum of 100 mOhm at 20 A and 12 V gate drive. With a maximum power dissipation of 190 W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 51 nC at 15 V and input capacitance (Ciss) of 1500 pF at 100 V. The device is housed in a TO-247-3 package, designed for through-hole mounting and operating temperatures from -55°C to 175°C. This MOSFET is commonly utilized in power supplies, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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