UF3C065080B7S
SICFET N-CH 650V 27A D2PAK-7Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo SiCFET N-Channel UF3C065080B7S. This surface mount device offers a 650 V drain-source voltage and 27 A continuous drain current at 25°C (Tc). Featuring a low on-resistance of 105 mOhm at 20 A and 12 V, this SiCFET is constructed using a cascode SiCJFET technology. The UF3C065080B7S comes in a D2PAK-7 (TO-263-8) package and operates across a temperature range of -55°C to 175°C. Key parameters include a maximum gate charge of 23 nC at 12 V and input capacitance of 760 pF at 100 V. Maximum power dissipation is 136.4 W (Tc). This component is suitable for applications in power conversion and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 136.4W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | D2PAK-7 |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 100 V |
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