UF3C065040K4S
MOSFET N-CH 650V 54A TO247-4Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF3C065040K4S is a 650V N-Channel MOSFET designed for high-power applications. This component features a continuous drain current capability of 54A at 25°C (Tc) and a maximum power dissipation of 326W (Tc). The Rds(on) is specified at a maximum of 52mOhm at 40A and 12V gate drive. With a gate charge (Qg) of 43 nC at 12V and input capacitance (Ciss) of 1500 pF at 100V, this device offers efficient switching characteristics. The UF3C065040K4S is housed in a TO-247-4 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 175°C (TJ). Its robust specifications make it suitable for use in power factor correction, electric vehicle charging, and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 326W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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