UF3C065040K3S
MOSFET N-CH 650V 54A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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Qorvo UF3C065040K3S is an N-Channel MOSFET with a drain-source breakdown voltage of 650V. This component offers a continuous drain current of 54A (Tc) and a maximum power dissipation of 326W (Tc). The Rds(On) is specified at 52mOhm at 40A and 12V gate-source voltage. Key parameters include a gate charge (Qg) of 51 nC @ 15V and input capacitance (Ciss) of 1500 pF @ 100V. The device features a maximum gate-source voltage of ±25V and a threshold voltage (Vgs(th)) of 6V @ 10mA. Designed for through-hole mounting, it is housed in a TO-247-3 package. This MOSFET is suitable for applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 40A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 326W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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