UF3C065040B3
MOSFET N-CH 650V 41A TO263Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF3C065040B3 is an N-Channel enhancement mode MOSFET designed for high-performance power applications. This component features a 650V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 41A (Tc) at 25°C. With a maximum on-resistance (Rds On) of 52mOhm at 30A and 12V gate-source voltage, it offers efficient power conversion. The UF3C065040B3 supports a gate-source voltage range of ±25V and has a threshold voltage (Vgs(th)) of 6V at 10mA. Key parameters include a gate charge (Qg) of 51nC at 15V and an input capacitance (Ciss) of 1500pF at 100V. Delivered in a TO-263 (D2PAK) surface mount package, this device is suitable for demanding applications in industrial power supplies, electric vehicle charging, and renewable energy systems. Its maximum power dissipation is rated at 176W (Tc), and it operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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