UF3C065030K3S
SICFET N-CH 650V 85A TO247-3Manufacturer: Qorvo
Categories: Single FETs, MOSFETs
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The Qorvo UF3C065030K3S is a 650V N-Channel SiCFET designed for demanding power applications. This component offers a continuous drain current capability of 85A at 25°C (Tc) with a maximum on-resistance of 35mOhm at 50A and 12V gate drive. Featuring a TO-247-3 package, it supports through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge (Qg) of 51 nC at 15V and input capacitance (Ciss) of 1500 pF at 100V. This SiCFET technology is suitable for high-efficiency power conversion in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Cascode SiCJFET) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 50A, 12V |
| FET Feature | - |
| Power Dissipation (Max) | 441W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
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