UJ3D1250K2
DIODE SIL CARB 1.2KV 50A TO247-2Manufacturer: Qorvo
Categories: Single Diodes
Quality Control: Learn More
The Qorvo UJ3D1250K2 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This electronic component offers a maximum DC reverse voltage (Vr) of 1200 V and an average rectified forward current (Io) of 50 A. It features a low forward voltage (Vf) of 1.7 V at 50 A and a reverse leakage current of 400 µA at 1200 V. The UJ3D1250K2 exhibits a no recovery time characteristic for currents greater than 500 mA, contributing to its efficiency. With a junction operating temperature range of -55°C to 175°C, this diode is suitable for demanding environments. It is housed in a TO-247-2 package, facilitating through-hole mounting. Typical applications include power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2340pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
Request a Quote
Clients Also Buy
UJ3D1202TS
DIODE SIL CARB 1.2KV 2A TO220-2
UJ3D1220KSD
DIODE SIL CARB 1.2KV 10A TO247-3
UJ3D1210TS
DIODE SIL CARB 1.2KV 10A TO220-2
